Less than a year has passed since Samsung and Toshiba set out to develop Toggle DDR2 NAND Flash memory and now, the former has announced starting production of such a solution, a 64Gb (8GB) MLC (multi-level cell) NAND chip with a Toggle DDR2 interface.
Made on 20nm-class technology, the 64Gb NAND has a 400 Mbps bandwidth (today's widespread SDR NAND tops 40 Mbps while Toggle DDR1 memory reaches 133 Mbps) and is suitable for high-performance smartphones, tablets and solid state drives (SSDs).
"With this 20nm-class, 64Gb, toggle DDR 2.0 NAND, Samsung is leading the market, which is evolving to fourth-generation smartphones and SATA 6Gbps SSDs," said Wanhoon Hong, executive vice president, memory sales & marketing, Samsung Electronics. "We will continue to aggressively develop the world's most advanced toggle DDR NAND flash solutions with higher performance and density, since we see them as vital to enabling a greater diversity of services for mobile phone users worldwide."
According to Samsung, beside being faster that chips available today, the 64Gb Toggle DDR2 NAND also allows for a 50% increase in productivity over 20nm-class 32Gb MLC NAND chips with a Toggle DDR 1.0 interface. Faster, better, still small, hopefully it will also be quickly adopted.



Source :tcmagazine.com